![]() ![]() However, one of the most critical bottlenecks of CMOS image sensors is the size that is smaller than target objects, making one-to-one direct mapping between a sensor and an object impossible without using lenses. Our nano-patterning of MoS 2 for photosensing application paves a route to structural engineering of two-dimensional materials for highly sensitive and responsive optoelectronic devices.ĭue to the dramatic advance in complementary metal-oxide-semiconductor (CMOS) image sensors in the past decades, they are widely used in present-day smartphones and digital cameras 1, 2. The effect of nano-patterning is therefore to significantly enhance the responsivity of multilayer nanoporous MoS 2 phototransistors, exhibiting an ultra-high photoresponsivity of 622.2 A W −1. These exposed zigzag edges are responsible for multiple trap states in the bandgap region, as confirmed by photo-excited charge-collection spectroscopy measurements on multilayer nanoporous MoS 2 phototransistors, showing that in-gap states only near the valence band can result in a photogating effect. The fabricated nanoporous MoS 2, consisting of periodic hexagonal arrays of hexagon nanoholes, includes abundant edges having a zigzag configuration of atomic columns with molybdenum and sulfur atoms. Here, to overcome this fundamental limitation, we propose a structural engineering of MoS 2 via nano-patterning using block copolymer lithography. Indirect bandgap of multilayer molybdenum disulfide has been recognized as a major hindrance to high responsivity of MoS 2 phototransistors. ![]()
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